NTD silicon is designed for manufacture of semiconductor devices for power electronics, charged coupled devices, and extra-large circuits.
NTD silicon is widely used in the world practice for development of devices with a minimal spread of electrical resistance: thyristors, charge coupled devices, VLSIs, radiation detectors, photodetectors. The technology of neutron doping of silicon has allowed to achieve a unique spatial uniformity of the doping element (phosphorus) which cannot be obtained by other methods.
The base material for doping is, mainly, silicon monocrystals grown by the method of none-crucible zone melting. The NTD technology allows to dope silicon ingots with a diameter of up to 127 mm and a length of 750 mm. The doping productivity of silicon ingots with a diameter of 127 mm on the final rating of the specific resistance id 60 ohms/cm - 6000 kg/year.
Doping uniformity. The developed technology allows to produce NTD silicon corresponding in its characteristics to world standards.